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DTC114EE NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 10k 10k sot-523/EMT3 marking 24
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Lead Free/RoHS Compliant |
| 描述与应用 | 特性 外延平面电路小片构建 互补PNP类型可用（DDTA） 内置偏置电阻R1= R2 无铅/ 符合RoHS标准 |
