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DTC123JM3T5G NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 2.2k 4.7k gain80 sot-723 marking
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.47 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.26W/260mW |
| Description & Applications | Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SOT−723 Package can be Soldered using Wave or Reflow. • Available in 4 mm, 8000 Unit Tape & Reel • These are Pb−Free Devices |
| 描述与应用 | 特性 •简化电路设计 •缩小板面空间 •减少了元件数量 •SOT-723封装，可以使用波或回流焊接。 •可在4毫米，8000单位带卷 •这些都是无铅设备 |
