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DTC124XET1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 22k 47k sot-523 marking 8L
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.47 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 2) The bias resistors consist of thin film resistors with complete of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. |
| 描述与应用 | 特性 1）内置启用偏置电阻器的配置， 逆变电路无需连接外部输入电阻 2）偏置电阻组成的薄膜电阻具有完整的输入。他们也有优势，几乎完全消除了寄生效应。 3）只有开/关条件需要设置操作，使装置的设计容易。 |
