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DTC144EUPT NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 47k 47k SOT-323/SC-70 marking WE
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 68 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features Small surface mounting type.(SC-70/SOT-323) High current gain Suitable for high packing density Low colloector-emitter saturation Internal isolated NPN transistors in one package Built in bias resistor(R1=477kΩ,Typ.) |
| 描述与应用 | 特性 小型表面贴装型（SC-70/SOT-323） 高电流增益 适用于高包装密度 低j集电极发射极饱和 内部分离NPN晶体管在一个封装中 内置偏置电阻（R1=477kΩ，典型值。） |
