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DTC643TK NPN Bipolar Digital Transistor (BRT) 20V 600mA/0.6A 2.2k SOT-23/SC-59/SMT3 marking R03
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 820 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy 4) Low saturation voltage, typically Vce(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. 5) These transistors can be used at high current levels, IC=600mA |
| 描述与应用 | 特性 1）内置启用偏置电阻器的逆变器电路无需连接外部输入电阻配置 2）偏置电阻组成的薄膜电阻完全隔离，允许负偏置输入。他们也有优势，几乎完全消除了寄生效应。 3）只有开/关条件需要设置操作，使装置的设计容易 4）低饱和电压，通常Vce（sat）=40mV@IC / IB=50mA/2.5mA，使得这些晶体管适合用于静音电路。 5）这些晶体管可用于高电流水平，IC=600毫安 |
