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EC4304C MOSFET P-Channel -30V -250mA 1.5ohm Vth:-0.4--1.4V ECSP1008-4 marking V high-speed switch 2.5V drive ESD protection

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		10V
最大漏极电流Id
Drain Current		-0.25A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		1.5Ω @-120mA,-4V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.4--1.4V
耗散功率Pd
Power Dissipation		150mW/0.15W
Description & Applications• Low ON-resistance. • High-speed switching. • 2.5V drive. • High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].
描述与应用•低导通电阻。 •高速开关。 •2.5V驱动。 •高抗ESD损害（典型值300V）保护二极管之间连接的栅极和源]
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