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ECH8603-TL-E Complex FET -20V -4A ECH8 marking JC ultra high-speed switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 87mΩ@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4~-1.3V |
| 耗散功率Pd Power Dissipation | 1.3W |
| Description & Applications | P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching • 2.5V drive. |
| 描述与应用 | P-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •超高速开关 •2.5V驱动。 |
