ECH8603-TL-E Complex FET -20V -4A ECH8 marking JC ultra high-speed switch 2.5V drive|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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ECH8603-TL-E Complex FET -20V -4A ECH8 marking JC ultra high-speed switch 2.5V drive

Model：ECH8603-TL-E
Mark / screen / code / typing：JC
Manufacturer：
Date Code：05+NOPB22639
Package：ECH8
Standard Package：8000
Min Order：100

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	10V
最大漏极电流Id Drain Current	-4A
源漏极导通电阻Rds Drain-Source On-State Resistance	87mΩ@ VGS = -2.5V, ID = -1A
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.4~-1.3V
耗散功率Pd Power Dissipation	1.3W
Description & Applications	P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching • 2.5V drive.
描述与应用	P-沟道硅MOSFET 通用开关设备应用特点 •低导通电阻。 •超高速开关 •2.5V驱动。

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