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F5019-S-TE24R MOSFET N-Channel TO-263 marking F5019 low on-resistance/fast switch/4Vdriver

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Product description
最大源漏极电压Vds Drain-Source Voltage40V
最大栅源极电压Vgs(±) Gate-Source Voltage-0.3V~7V
最大漏极电流Id Drain Current12A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance140mΩ @ID=5A, VGS=5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0V~2.8V
耗散功率Pd Power Dissipation30W
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