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FC117 PNP+PNP Complex Bipolar Transistor -20V -500mA HEF=160~560 SOT-163/CPH6 marking 117 switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
-20V |
|
V(BR) CEO Collector-Emitter Voltage |
-15V |
| Collector Current(IC) | -500MA/-0.5A |
| Transtion Frequency(fT) | 400MHZ |
| DC Current Gain(hFE) | 160~560 |
|
VCE(sat) Collector-Emitter Saturation Voltage |
-0.56V |
| Power Dissipation (Pd) | 200MW/0.2W |
| Description & Applications | PNP Epitaxial Planar Silicon Composite Transistor
Low-Frequency
General-Purpose Amp Applications
Features • PNP Epitaxial Planar Silicon Composite Transistor • Low-Frequency General-Purpose Amp Applications • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package. • Low collector to emitter saturation voltage. • Excellent in thermal equilibrium and pair capability
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| Technical Documentation Download | Read Online |
