FDC638P MOSFET P-Channel -20V -2.8A 0.11ohm SOT-163 marking 638|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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FDC638P MOSFET P-Channel -20V -2.8A 0.11ohm SOT-163 marking 638

Model：FDC638P
Mark / screen / code / typing：638
Manufacturer：
Date Code：06NOPB 05+NOPB600
Package：SOT-163/SOT23-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	8V
最大漏极电流Id Drain Current	-2.8A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.11Ω @-2.8A,-4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.4--1V
耗散功率Pd Power Dissipation	1.6W
Description & Applications	TM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
描述与应用	TM-6包装设计采用铜引线框架的卓越的热性能和电气性能。高密度电池设计极低的RDS（ON）卓越的导通电阻和最大DC电流能力

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