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FDC638P MOSFET P-Channel -20V -2.8A 0.11ohm SOT-163 marking 638

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-2.8A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.11Ω @-2.8A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4--1V
耗散功率Pd
Power Dissipation
1.6W
Description & ApplicationsTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
描述与应用TM-6包装设计采用铜引线框架的 卓越的热性能和电气性能。 高密度电池设计极低的RDS(ON) 卓越的导通电阻和最大DC电流能力
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