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FDG311N MOSFET N-Channel 20V 1.9A SOT-363/SC70-6/TSSOP6/SC-88 marking 11 low Rds
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 1.9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 150mΩ@ VGS = 2.5V, ID =1.6A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.5V |
| 耗散功率Pd Power Dissipation | 750mW/0.75W |
| Description & Applications | N-Channel 2.5V Specified Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package. |
| 描述与应用 | 2.5V额定功率N沟道沟道MOSFET 概述 此N沟道MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能低栅极电荷。这些器件非常适合用于便携式电子产品应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 •低栅极电荷。 •高性能沟道技术极低的RDS（ON）。 •紧凑型工业标准SC70-6表面贴装封装。 |
