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FDN335N MOSFET N-Channel 20V 1.7A SOT-23/SC-59 marking 335 low on-resistance/ultra highspeed switch/4Vdriver

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$0.126
≤99
$0.113
≤499
$0.094
≤999
$0.082
≤2999
$0.076
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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current1.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.070Ω/Ohm @17.7A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.5V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsN-Channel 2.5V Specified PowerTrench TM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. • Low gate charge (3.5nC typical). • High performance trench technology for extremelyow RDS(ON) High power and current handling capability.
描述与应用N沟道2.5V指定的PowerTrench TM MOSFET 概述 这N沟道2.5V指定的MOSFET的生产 采用飞兆半导体先进的PowerTrench 过程中,已特别针对减少通态电阻,但维持低栅极电荷 优越的开关性能。 •低栅极电荷(3.5nC典型值)。 •高性能沟道技术为extremelyow RD(ON) 高功率和电流处理力
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