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FDN360P MOSFET P-Channel -30V -2A 0.060ohm SOT-23 marking 360

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.060Ω @-2A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1--3V
耗散功率Pd
Power Dissipation		500mW/0.5W
Description & Applications• Low gate charge (5nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
描述与应用•低栅极电荷（典型5NC）。 •快速开关速度。 •高性能沟道技术极 低RDS（ON） •高功率和电流处理能力
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