Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
FDN360P MOSFET P-Channel -30V -2A 0.060ohm SOT-23 marking 360
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.060Ω @-2A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--3V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | • Low gate charge (5nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. |
| 描述与应用 | •低栅极电荷（典型5NC）。 •快速开关速度。 •高性能沟道技术极 低RDS（ON） •高功率和电流处理能力 |
