My order
Share to:  
Location:Home > Stock Inventory > Product Details

FDZ298N MOSFET N-Channel 20V 6A BGA marking low Rds

Hot selling goods

Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance39mΩ@ VGS = 2.5V, ID =5A
开启电压Vgs(th) Gate-Source Threshold Voltage0.6~1.5V
耗散功率Pd Power Dissipation1.7W
Description & ApplicationsN-Channel 2.5 V Specified Power Trench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Applications · Battery management · Battery protection Features · Ultra-thin package · Outstanding thermal transfer characteristics · Ultra-low Qg x RDS(ON) figure-of-merit · High power and current handling capability.
描述与应用N沟道2.5 V额定功率沟槽BGA MOSFET 概述 结合飞兆半导体先进的2.5V功率沟槽进程与国家最先进的BGA封装,的FDZ298N最大限度地减少电路板空间和RDS(ON)。这BGA MOSFET体现了包装技术的突破使设备结合优异的热传递特性,高电流处理能力,超低扁平封装,低栅极电荷和低RDS(ON)。 应用 ·电池管理 ·电池保护 特点 ·超薄封装 ·杰出的热传递的特点 ·超低QG x RDS(ON)图的优点 ·高功率和电流处理能力。
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00