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FMG12 NPN+NPN Complex Bipolar Digital Transistor 30V 600mA 100~600 300mW/0.3W SOT-153/SMT5/SC-74A/SOT23-5 marking G12 switching inverting interface driver circuit
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~600 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features •Emitter common(dual digital transistors) •Includes Two DTC323T transistors in a single SMT package. •low Vce(sat).ideal for muting circuit •can be used with Ic=600mA |
| 描述与应用 | 特点 •发射极普通的（双数字晶体管） •包括两个DTC323T的晶体管在一个单一的SMT封装。 •低Vce（sat）的静音电路的理想选择。 •可以用IC=600毫安 |
