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FMG8A NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 300mW/0.3W SOT-153/SMT5/SC-74A/SOT23-5 marking G8 switching inverting interface driver circuit

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≤99
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≤2999
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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.1
Q2基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.1
直流电流增益hFE DC Current Gain(hFE)
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures •Emitter common (dual digital transistors) •Two DTC143Z chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half.
描述与应用特点 •发射极普通的(双数字晶体管) •两个DTC143Z芯片在EMT或UMT或SMT封装。 •安装成本和面积可减少一半
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