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FMMT495TA NPN Transistors(BJT) 170V 1A 100MHz 100~300 300mV/0.3V SOT-23/SC-59 marking 495
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 170V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 150V |
集电极连续输出电流IC Collector Current(IC) | 1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~300 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc Power Dissipation | 500mW/0.5W |
Description & Applications | SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR |
描述与应用 | SOT23 NPN硅平面中功率高性能晶体管 |