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FP303 Complex Bipolar Transistor+doides 2A 50V PCP5 marking 303
三极管BJT类型 TYPE | NPN |
三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
三极管BJT集电极连续输出电流IC Collector Current(IC) | 2A |
三极管BJT截止频率fT Transtion Frequency(fT) | 150MHz |
三极管BJT直流电流增益hFE DC Current Gain(hFE) | 100mA |
三极管BJT管压降VCE(sat) Collector-Emitter Saturation Voltage | 0.15~0.4V |
二极管DIODE类型 TYPE | 肖特基-单管 SBD-Single |
二极管DIODE反向电压VR Reverse Voltage | 50V |
二极管DIODE正向整流电流Io Rectified Current | 500mA |
二极管DIODE正向电压降VF Forward Voltage(Vf) | 550mV |
耗散功率Pc Power Dissipation | 800mW |
Description & Applications | Features • NPN Epitaxial Planar Silicon Transistor • Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting. • The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in onepackage. • DC-DC Converter Applications |
描述与应用 | 特点 •NPN平面外延硅晶体管 •复合型NPN晶体管和Schottoky的垒二极管促进高密度安装。 •FP303由等效于芯片2SD1623和SB05-05CP,它被放置在一个包。 •DC-DC转换器应用 |