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FSB660A PNP transistors（BJT） -60V -2A 75MHz 250~550 -300mV/-0.3V SOT-23/SC-59 marking 660A high current gain/low saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | 75MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 250~550 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. |
| 描述与应用 | 低饱和PNP晶体管 这些设备的设计与高电流增益和低饱和电压与集电极电流高达2A的连续。 |
