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FX803 Complex Bipolar Transistor+doides 5A 30V XP6 marking X6
| 三极管BJT类型 TYPE | NPN |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | 5A |
| 三极管BJT截止频率fT Transtion Frequency(fT) | 220MHz |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | 500mA |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | 220~500mV |
| 二极管DIODE类型 TYPE | 肖特基-双管共阴 SBD-1 Pair Common Cathode |
| 二极管DIODE反向电压VR Reverse Voltage | 30V |
| 二极管DIODE正向整流电流Io Rectified Current | 4A |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | 550mV |
| 耗散功率Pc Power Dissipation | 1.5W |
| Description & Applications | Features • TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode (Twin type · Cathode Common) • DC-DC Converter • Complex type of a low saturation voltage, high speed switching and large current NPN transistor and a fast recovery and low forward voltage Schottky barrier diode facilitating high-sensity mounting. • The FX803 is composed of 2 chips, one being equivalent to the 2SB1628 and the other the SB20W03P, placed in one package. |
| 描述与应用 | 特点 •TR：NPN平面外延硅晶体管 SBD：肖特基势垒二极管（双床型·阴极常见） •DC-DC转换器 •复杂型低饱和电压，高速交换和大电流NPN晶体管和一个快速恢复和低正向电压的肖特基势垒二极管促进高SENSITY的安装。 •FX803组成的2个芯片，一个是相当于2SB1628情况SB20W03P的，放置在一个包装。 |
