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FZT1151ATA PNP transistors（BJT） -45V -3A 145MHz 250~800 -300mV/-0.3V SOT-223 high gain /low saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -45V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 145MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 250~800 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 2.5W |
| Description & Applications | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES 4 Amp Continuous Current 10 Amp Pulse Current Low Saturation voltage High Gain |
| 描述与应用 | PNP硅平面中功率高增益晶体管 特点 4安培连续电流 10安培脉冲电流 低饱和电压 高增益 |
