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G2306 MOSFET N-Channel 20V 5.3A SOT-23/SC-59 marking 2306 low gate chargefast switch/very low RDS
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12v |
最大漏极电流Id Drain Current | 5.3A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.03Ω/Ohm @5.5A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.5-1.2V |
耗散功率Pd Power Dissipation | 1.38W |
Description & Applications | ԦCapable of 2.5V gate drive ԦLower on-resistance ԦReliable and Rugged |
描述与应用 | 能够在2.5V栅极驱动 低导通电阻 可靠耐用 |