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GA4F4M NPN Bipolar Digital Transistor (BRT) 60V 100mA/0.1A 22k 22k gain60-90 SOT-323/SC-70 marking AB1 High current drives IC output
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 1 |
直流电流增益hFE DC Current Gain(hFE) | 60-90 |
截止频率fT Transtion Frequency(fT) | |
耗散功率Pc Power Dissipation | 0.2W/200mW |
Description & Applications | FEATURES • Compact package • Resistors built-in type • Complementary to GN4xxx |
描述与应用 | 特性 •小型封装 •内置电阻型 •对管是GN4xxx |