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GN01010NQTD MESFET-N channel 6V 15mA-30mA SOT-143 marking 5AQ RF application/low noise
最大源漏极电压Vds Drain-Source Voltage | 6V |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -4V |
漏极电流(Vgs=0V)IDSS Drain Current | 15mA-30mA |
关断电压Vgs(off) Gate-Source Cut-off Voltage | |
耗散功率Pd Power Dissipation | 200mW/0.2W |
Description & Applications | GaAs MMICs. GaAs N-Channel MES IC. For high-output high-gain amplification. Features * General-use wide-band amplifier * Low noise * With bandwidth control pin |
描述与应用 | 砷化镓MMIC的。 N沟道MES砷化镓IC。 对于高输出高增益放大。 特点 *一般使用宽带放大器 *低噪音 *随着带宽控制引脚 |