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GN1042 MESFET-N channel 6V 28mA-60mA SOT-143 marking 0O RF application
| 最大源漏极电压Vds Drain-Source Voltage | 6V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 28mA-60mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | GaAs N-Channel MES For VHF/UHF wide-band low-noise RF-amplification Superior in 2nd harmonics distortion Automatic mounting is possible with emboss taping |
| 描述与应用 | 砷化镓N沟道MES 用于甚高频/ 超高频宽带低噪声RF放大 高级的二次谐波失真 自动安装可行 |
