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GN1L3N PNP Bipolar Digital Transistor (BRT) -60V -100mA/-0.1A 35~100 0.15W/150mW SOT-323/SC-70 marking M82 switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.47
直流电流增益hFE DC Current Gain(hFE)35~100
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeature •silicon transistor •medium speed switching resistor built-in type PNP transistor •resistor built-in type •complementary to GA1L3N
描述与应用特点 •硅晶体管 •中速开关电阻器内置型PNP晶体管 •电阻器内置型 •GA1L3N互补
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