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H5N2004DSTL MOSFET N-Channel 200V 8A TO-252/D-PAK marking 5N2004 low gate charge
| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30v |
| 最大漏极电流Id Drain Current | 8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.48Ω/Ohm @4A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 3.0-4.5V |
| 耗散功率Pd Power Dissipation | 30W |
| Description & Applications | • Low on-resistance: R DS (on) = 0.38 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 • Avalanche ratings |
| 描述与应用 | •低导通电阻R DS（ON）=0.38Ω（典型值）。 •低漏电流：IDSS= 1μA最大（VDS= 200 V） •高速开关：TF =10 ns（典型值）（VGS=10 V，VDD= 100 V，ID= 4 A） •低栅极电荷QG =14 NC（典型值）（VDD= 160 V，VGS=10V，ID= 8 A） •雪崩额定值 |
