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HAT2206C-EL-E N MOSFET 12V 2A SOT363 MARKING VW Low on-resistance Low drive current
| Drain-Source Voltage （Vds） | 12V |
|
Vgs(±) Gate-Source Voltage |
8V |
| Drain Current （Id） | 2A |
| Drain-Source On-State （Rds） | RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) |
|
Vgs （th） Gate-Source Threshold Voltage |
|
| Power dissipation （Pd） | 830MW/0.83W |
| Description & Applications | Silicon N Channel MOS FET
Power Switching
• Low on-resistance
RDS (on) = 65 mΩ typ. (at VGS = 4.5 V)
• Low drive current.
• High density mounting
• 1.8 V gate drive devices.
|
