Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
Integrated Circuit(IC) NAND gate HD74LVC00TE TSSOP14 marking
逻辑类型 Logic Type | 与非门 NAND Gate |
电路数 Number of Circuits | 4 |
输入数 Number of Inputs | 2 |
电源电压Vcc Voltage - Supply | 2V~5.5V |
静态电流Iq Current - Quiescent (Max) | 20uA |
输出高,低电平电流 Current - Output High, Low | -24mA,24mA |
低逻辑电平 Logic Level - Low | 0.8V |
高逻辑电平 Logic Level - High | 2V |
传播延迟时间@Vcc,CL Max Propagation Delay @ V, Max CL | 3ns @ 5V,50pF |
Description & Applications | Quad. 2-input NAND Gates;Features VCC = 2.0 V to 5.5 V All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V) Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C) Typical VOH undershoot > 2.0 V (@VCC = 3.3 V, Ta = 25°C) High output current ±24 mA (@VCC = 3.0 V to 5.5 V) |
描述与应用 | 四。 2输入与非门;特性 VCC=2.0 V至5.5 V 所有输入VIH(最大)=5.5 V(VCC= 0 V至5.5 V) 典型VOL接地反弹<0.8 V(@ VCC=3.3 V,Ta=25°C) 典型VOH冲>2.0 V(VCC= 3.3 V,Ta= 25°C) 高输出电流±24毫安(@ VCC=3.0 V至5.5 V) |