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HN1B01F-Y PNP+NPN Complex Bipolar Transistor -50V/50V -150mA/150mA HEF=120~240 SOT-163/SM6/SOT-26 marking 1AY switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -150mA/150mA |
| 截止频率fT Transtion Frequency(fT) | 120MHz/150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~400/120~240 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -100mV/100mV |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Q1: • High voltage and high current : VCEO = −50 V, IC = −150 mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.) Q2: • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) • Audio-Frequency General-Purpose Amplifier Applications |
| 描述与应用 | 特点 •东芝晶体管的硅PNP外延型硅NPN外延型（PCT工艺）（PCT工艺） Q1： •高电压和高电流：VCEO=-50 V，IC= -150 mA（最大） •高HFE：HFE=120〜400 •优秀的HFE线性：HFE（IC= -0.1毫安）/ HFE（IC=-2毫安）=0.95（典型值） Q2： •高电压和高电流：VCEO=50 V，IC=150 mA（最大） •高HFE：HFE=120〜400 •优秀的HFE线性：HFE（IC= 0.1毫安）/ HFE（IC= 2毫安）=0.95（典型值） •音频频率通用放大器应用 |
