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HN1C05FE-A NPN+NPN Complex Bipolar Transistor 15V 400mA HEF=300~1000 SOT-563/ES6 marking FA switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
15V |
|
V(BR) CEO Collector-Emitter Voltage |
12V |
| Collector Current(IC) | 0.4A |
| Transtion Frequency(fT) | 130MHZ |
| DC Current Gain(hFE) | 300~1000 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.25V |
| Power Dissipation （Pd） | 0.1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Low Frequency Amplifier Applications
Muting Application
Switching Application
* Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.)
:@ IC = 10mA/ IB = 0.5mA
* High Collector Current :IC=400mA(Max.)
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| Technical Documentation Download | Read Online |
