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HN2S02JE SBD Schottky Barrier Diodes 40V 100mA/0.1A 600mV/0.6V SOT-553/ESV marking A9 fast switch low forward voltage
| 反向电压Vr Reverse Voltage | 40V |
| 平均整流电流Io AVerage Rectified Current | 100mA/0.1A |
| 最大正向压降VF Forward Voltage(Vf) | 600mV/0.6V |
| 最大耗散功率Pd Power dissipation | 100MW/0.1W |
| Description & Applications | . High-speed Switching Applications . HN2S02JE is composed of two independent Schottky Barrier diodes. . Low forward voltage: VF (3) = 0.54V (typ.) . Low reverse current: IR = 5μA (max.) |
| 描述与应用 | 高速开关应用 HN2S02JE是由两个独立的肖特基二极管并排。 低正向电压VF（3）=0.54V（典型值） 低反向电流：IR=5μA（最大） |
