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HPT8550-B9D PNP transistors（BJT） -35V -800mA/-0.8A 120MHz 150~300 -500mV/-0.5V SOT-23/SC-59 marking B9D high current
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -35V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流IC Collector Current(IC) | -800mA/-0.8A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 150~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP epitaxial planar transistor HIGH CURRENT APPLICATION. FEATURE Complementary to KTC8050S. |
| 描述与应用 | PNP外延平面晶体管 高电流应用。 特写 互补型KTC8050S。 |
