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IMB10 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A 0.3W R1=2.2KΩ R2=47KΩ SOT-163/SMT6/SC-74 marking B10 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 2.2KΩ |
| Base-Emitter Resistance(R2) | 47kΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.47 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250mhz |
| Power Dissipation （Pd） | 300mw/0.3W |
| Description & Applications |
General purpose(dual digital transistors)
Features
1) Two DTA123J chips in a SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
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| Technical Documentation Download | Read Online |
