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IMH20 NPN+NPN Complex Bipolar Digital Transistor 30V 600mA 100~600 300mW/0.3W SOT-163/SMT6/SC-74 marking H20 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)30V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)15V
集电极连续输出电流IC Collector Current(IC)600mA
Q1基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q1电阻比(R1/R2) Q1 Resistance Ratio
Q2基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q2电阻比(R1/R2) Q2 Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)100~600
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures •General purpose (dual digital transistors) •Two DTC323T chips in a SMT package. •Mounting possible with SMT3 automatic mounting machines. •Transistor elements are independent, eliminating interference.
描述与应用特点 •通用(双数字晶体管) •两个DTC323T的芯片在SMT包装。 •安装可能与SMT3可能自动装配机。 •晶体管元素是独立的,消除干扰。
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