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IMH9 NPN+NPN Complex Bipolar Digital Transistor 50V 70mA 300mW/0.3W SOT-163/SMT6/SC-74 marking H9 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)70mA
Q1基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.21
Q2基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.21
直流电流增益hFE DC Current Gain(hFE)
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures •General purpose (dual digital transistors) •Two DTC114Ys chips in a EMT or UMT or SMT package. •Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half.
描述与应用特点 •通用(双数字晶体管) •两个DTC114Ys芯片在EMT或UMT或SMT封装。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的,消除干扰。 •安装成本和面积可减少一半。
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