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IMT17 PNP+PNP Complex Bipolar Transistor -60V -500mA 120~390 SOT-163/SMT6/SC-74 marking T17 switch and digital circuit application

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集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-500mA
Q1基极输入电阻R1 Input Resistance(R1)200MHz
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)120~390
Q1电阻比(R1/R2) Q1 Resistance Ratio-600mV
Q2基极输入电阻R1 Input Resistance(R1)300mW
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)Features • General Purpose Transistor (Isolated Dual Transistors) • Two 2SA1036K chips in an SMT package. • Same size as SMT3 package, so same mounting machine can be used for both. • Transistor elements are independent, eliminating interference. • High collector current. IC = –500mA • Mounting cost, and area, are reduced by one half.
Q2电阻比(R1/R2) Q2 Resistance Ratio特点 •通用晶体管(隔离双晶体管) •两个2SA1036K芯片在SMT封装。 •SMT3封装尺寸相同,所以相同的安装机器可以同时用于。 •晶体管元素是独立的,消除干扰。 •高集电极电流。 IC=-500毫安的 •安装成本和面积,减少了一半。
直流电流增益hFE DC Current Gain(hFE)
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation
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