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IRF6678TR1 MOSFET N-Channel 2.7A MT marking low gate chargevery low RDS/high power and current handling capability
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.16Ω/Ohm @1.9A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 2.1W |
| Description & Applications | DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. DirectFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated |
| 描述与应用 | 说明 Vishay的第三代功率MOSFET提供 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 SOT-223封装是专为表面安装 使用气相，红外或波峰焊技术。 其独特的包装设计，可以轻松自动 挑选和地方与其他SOT或SOIC封装，但 提高热过往的表现有额外的好处 由于散热放大“选项卡。的功耗 大于1.25 W是可能在一个典型的表面贴装应用。 DirectFET功率MOSFET 表面贴装 先进的工艺技术 超低导通电阻 动态dv/ dt额定值 快速切换 |
