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IRFR210T MOSFET N-Channel 200V 2.7A TO-252/D-PAK marking FR210

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Product description
最大源漏极电压Vds Drain-Source Voltage200V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current2.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.5Ω/Ohm @1350mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2.0-4.0V
耗散功率Pd Power Dissipation2.5W
Description & ApplicationsDESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
描述与应用说明 Vishay的第三代功率MOSFET提供 设计师与快速切换的最佳组合, 坚固耐用的设备设计,低导通电阻和成本效益。 该DPAK是专为表面安装使用蒸汽相,红外线,或波峰焊技术。直 导致通孔版本(IRFU,赐福系列)安装应用程序。功耗水平,直至1.5 W 典型的表面贴装应用中是可能的。 •2.7A,200V,RDS上) =1.5Ω@ VGS= 10 V •低栅极电荷(典型7.2nC) •低Crss(典型6.8 pF) •快速开关 •100%雪崩测试 •改进的dv / dt能力
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