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IRFR5305 MOSFET P-Channel -3.1A 0.065ohm SOT-252 marking FR5305 low on-resistance
最大源漏极电压Vds Drain-Source Voltage | |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | -3.1A/-0.1A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.065Ω @-1.6A,-10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -2.0--4.0V |
耗散功率Pd Power Dissipation | 10W |
Description & Applications | Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated |
描述与应用 | 超低导通电阻 表面贴装(IRFR5305) 直铅(IRFU5305) 先进的工艺技术 快速切换 |