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ISL9N306AD3ST MOSFET N-Channel 30V 5A TO-252/D-PAK marking N306AD simulation model/simulation model

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.0052Ω/Ohm @250A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-3V
耗散功率Pd Power Dissipation125W
Description & ApplicationsN-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. • Fast switching
描述与应用N沟道逻辑电平PWM优化UltraFET®沟槽功率MOSFET 30V,50A,6MΩ 概述 该设备采用了新的先进的沟槽MOSFET 的技术和功能,同时保持低的导通电阻低栅极电荷。 为开关应用进行了优化,该设备提高 DC/ DC转换器的整体效率,并允许以较高的开关频率的操作。 快速切换
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