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KN4L3Z PNP Bipolar Digital Transistor (BRT) -60V -100mA/-0.1A 135~600 0.15W/150mW SOT-523/SC-75 marking F7 switch inverter interface driver circuit
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
电阻比(R1/R2) Resistance Ratio | |
直流电流增益hFE DC Current Gain(hFE) | 135~600 |
截止频率fT Transtion Frequency(fT) | |
耗散功率Pc Power Dissipation | 0.15W/150mW |
Description & Applications | FEATURES •SILICON TRANSISTOR •RESISTOR BUILT-IN TYPE PNP TRANSISTOR •Compact package •Resistors built-in type •Complementary to KA4xxx |
描述与应用 | 特点 •硅晶体管 •电阻器内置型PNP晶体管 •紧凑的封装 •内置式电阻器 •互补KA4xxx的 |