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KRC857E NPN+NPN Complex Bipolar Digital Transistor 50V 100mA R1=10KΩ R2=47KΩ 200mW/0.2W SOT-563/TES6 marking NH switching inverting interface driver circuit
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.21 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | 80~150 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process. •High Packing Density |
| 描述与应用 | 特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用。 •内置偏置电阻器。 •简化电路设计。 •减少了部件数量和制造工艺。 •高密度封装 |
