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KRX205E NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA R1=4.7KΩ HEF=120 200mW/0.2W SOT-563/TES6 marking BE switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V/-50V
集电极连续输出电流IC Collector Current(IC) 100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1) 4.7KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)  
Q1电阻比(R1/R2) Q1 Resistance Ratio  
Q2基极输入电阻R1 Input Resistance(R1) 4.7KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)  
Q2电阻比(R1/R2) Q2 Resistance Ratio  
直流电流增益hFE DC Current Gain(hFE) 120
截止频率fT Transtion Frequency(fT) 250MHz
耗散功率Pc Power Dissipation 200mW/0.2W
Description & Applications Features •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •Including two devices in TES6.(Thin Extreme Super mini type with 6 pin.) •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process.
描述与应用 特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用。 •包括两个设备(薄至尊超级迷你型6针)。在TES6。 •内置偏置电阻器。 •简化电路设计。 •减少了部件数量和制造工艺。
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