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KST05 NPN Transistors(BJT) 60V 500mA/0.5A 100MHz 50 250mV/0.25V SOT-23/SC-59 marking IH
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 50 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc Power Dissipation | 350mW/0.35W |
Description & Applications | Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC (max) = 350mW • Complement to KST55/57 |
描述与应用 | 驱动晶体管 •集电极 - 发射极电压VCEO = KST05:60V KST06:80V •集电极耗散功率:PC(最大值)=350MW •KST55/57补 |