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KTA1001-Y PNP transistors(BJT) -35V -3A 170MHz 160~320 -500mV/-0.5V SOT-89/SC-62 marking KY strobe flash
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC Collector Current(IC) | -3A |
截止频率fT Transtion Frequency(fT) | 170MHz |
直流电流增益hFE DC Current Gain(hFE) | 160~320 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 500mW/0.5W |
Description & Applications | PNP epitaxial planar transistor CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES Low Collector Saturation Voltage. High Power Dissipation. |
描述与应用 | PNP外延平面晶体管 照相机闪光灯Flash应用程序。 高电流应用。 特点 低集电极饱和电压。 高功率耗散。 |