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KTX401U-GR NPN+DIODES Complex Bipolar Transistor SOT-353/USV marking CE switch and digital circuit application
| BJT TYPE | NPN |
| BJT V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| BJT Collector-Emitter Voltage(VCEO) | 50V |
| BJT Collector Current(IC) | 150MA |
| BJT Transtion Frequency(fT) | 80MHZ |
| BJT DC Current Gain(hFE) | 120~400 |
| BJT VCE（sat） Collector-Emitter Saturation Voltage | 0.25V |
| DIODE TYPE | SWITCHING DIODES |
| DIODE VR Reverse Voltage | 85V |
| DIODE Io Rectified Current | 0.3A |
| DIODE Forward Voltage(Vf) | 1.2V |
| Pc Power Dissipation | |
| Description & Applications | EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
*Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
*Simplify circuit design.
*Reduce a quantity of parts and manufacturing process.
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