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L9012QLT1 PNP transistors（BJT） -40V -500mA/-0.5A 150~300 -600mV/-0.6V SOT-23/SC-59 marking 1YA
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 150~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor General Purpose Transistors FEATURES We declare that the material of product compliance with RoHS requirements. |
| 描述与应用 | PNP外延平面晶体管 通用晶体管 特点 我们声明，产品符合RoHS要求的材料。 |
