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LL6263-GS08 SBD Schottky Barrier Diodes 40V 2A 1V SOD80/LL34 fast switch low forward voltage
反向电压Vr Reverse Voltage | 40V |
平均整流电流Io AVerage Rectified Current | 2A |
最大正向压降VF Forward Voltage(Vf) | 1V |
最大耗散功率Pd Power dissipation | 400MW/0.4W |
Description & Applications | • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • Schottky Diodes |
描述与应用 | •金属硅肖特基势垒装置是由一个PN结保护环保护。 •低正向压降和快速开关使其成为理想的保护MOS装置,转向,偏置和耦合二极管快速开关,低逻辑电平应用。 •肖特基二极管 |