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LL6263-GS08 SBD Schottky Barrier Diodes 40V 2A 1V SOD80/LL34 fast switch low forward voltage

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Product description
反向电压Vr
Reverse Voltage
40V
平均整流电流Io
AVerage Rectified Current
2A
最大正向压降VF
Forward Voltage(Vf)
1V
最大耗散功率Pd
Power dissipation
400MW/0.4W
Description & Applications• Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • Schottky Diodes
描述与应用•金属硅肖特基势垒装置是由一个PN结保护环保护。 •低正向压降和快速开关使其成为理想的保护MOS装置,转向,偏置和耦合二极管快速开关,低逻辑电平应用。 •肖特基二极管
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