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MA3J741DOL SBD Schottky Barrier Diodes 30V 30mA 400mV/0.4V SOT-323/SC-70 marking M2P
反向电压Vr Reverse Voltage | 30V |
平均整流电流Io AVerage Rectified Current | 30mA |
最大正向压降VF Forward Voltage(Vf) | 400mV/0.4V |
最大耗散功率Pd Power dissipation | |
Description & Applications | • Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For switching circuits • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR •Common Anode Schottky Barrier Diodes . |
描述与应用 | •肖特基势垒二极管(SBD) •硅外延平面型 •开关电路 •低正向上升电压(VF)和满意的波检测效率(η) •温度系数小的正向特性 •极低的反向电流IR •共阳极肖特基二极管。 |